Omnipolar Hall Switch

HS553 Omnipolar Hall Effect Sensor

HS553 is a polarity-free Hall switch based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS553 provides an embedded controlled clock mechanism to provide clock sources for Hall devices and analog signal processing circuits. At the same time, this controlled clock mechanism can send control signals to make the circuits with large current consumption periodically enter "sleep" mode;

Also through this mechanism, the chip is periodically "woken up" and detects the magnitude of the magnetic field strength passing through the Hall device according to the predetermined magnetic field strength threshold.

If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. During the "sleep" cycle, the output transistor is locked in its previous state.

In battery-powered applications, this design provides the best support for extending the working life. The output transistor of HS553 is locked in the on state when there is a certain strong south or north magnetic field facing the package marking side, and locked in the off state when there is no magnetic field.



  • Product Detail


HS553 is a polarity-free Hall switch based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization technology to provide accurate and stable magnetic switch points.

In terms of circuit design, HS553 provides an embedded controlled clock mechanism to provide clock sources for Hall devices and analog signal processing circuits. At the same time, this controlled clock mechanism can send control signals to make the circuits with large current consumption periodically enter "sleep" mode;

Also through this mechanism, the chip is periodically "woken up" and detects the magnitude of the magnetic field strength passing through the Hall device according to the predetermined magnetic field strength threshold.

If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. During the "sleep" cycle, the output transistor is locked in its previous state.

In battery-powered applications, this design provides the best support for extending the working life. The output transistor of HS553 is locked in the on state when there is a certain strong south or north magnetic field facing the package marking side, and locked in the off state when there is no magnetic field.


Product features


1. Micro-power battery powered applications
2. Omni-polarity output switch
3. Operating voltage can be as low as 2.5V -5.5V
4. High sensitivity, high response frequency


Main applications

1. Solid-state switch
2. Speed detection
3. Interrupter
4. Magnetic sensor switch with low duty cycle to replace reed tube


Product parameters

上一个:HS481 omnipolar low power Hall switch

下一个:HS621 omnipolar low power Hall element

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